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Micron Technology Inc. NAND01GW3B2BZA6E
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| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 30ns |
| Access Time | 30 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-TFBGA |
| Supplier Device Package | 63-VFBGA (9x11) |
| Base Product Number | NAND01 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0051 |
| Other Names | -NAND01GW3B2BZA6E |
| Standard Package | 210 |
FLASH - NAND Memory IC 1Gbit Parallel 30 ns 63-VFBGA (9x11)
