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Micron Technology Inc. NAND128W3AABN6E

NAND128W3AABN6E


  • Manufacturer: NJR Corporation/NJRC
  • Chip 1 Group NO: NAND128W3AABN6E
  • Price:
  • Datasheet: -
  • Description: NAND128W3AABN6E(Kg)
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Details

Tags

Parameters
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Base Product Number NAND128
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN 3A991B1A
HTSUS 8542.32.0071
Standard Package 1,000
Mfr Micron Technology Inc.
Series -
Package Tray
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 128Mbit
Memory Organization 16M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 50ns
Access Time 50 ns
Voltage - Supply 2.7V ~ 3.6V
FLASH - NAND Memory IC 128Mbit Parallel 50 ns 48-TSOP I