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National Semiconductor NM27C010N200
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| Parameters | |
|---|---|
| Mfr | National Semiconductor |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | EPROM |
| Technology | EPROM - OTP |
| Memory Size | 1Mbit |
| Memory Organization | 128K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | - |
| Access Time | 200 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 32-DIP (0.600", 15.24mm) |
| Supplier Device Package | 32-DIP |
| Base Product Number | NM27C010 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0071 |
| Standard Package | 1 |
EPROM - OTP Memory IC 1Mbit Parallel 200 ns 32-DIP
