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NEC Corporation NP82N04NDG-S18-AY
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| Parameters | |
|---|---|
| Mfr | NEC Corporation |
| Series | Automotive, AEC-Q101 |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 41A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 143W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Through Hole |
| Supplier Device Package | 3-LDPAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| RoHS Status | ROHS3 Compliant |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 50 |
N-Channel 40 V 82A (Tc) 1.8W (Ta), 143W (Tc) Through Hole 3-LDPAK
