Parameters |
Mfr |
NXP USA Inc. |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
100 mA |
Voltage - Collector Emitter Breakdown (Max) |
45 V |
Vce Saturation (Max) @ Ib, Ic |
600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) |
15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
420 @ 2mA, 5V |
Power - Max |
500 mW |
Frequency - Transition |
100MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package |
TO-92-3 |
Base Product Number |
BC55 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Standard Package |
1,000 |
Bipolar (BJT) Transistor NPN 45 V 100 mA 100MHz 500 mW Through Hole TO-92-3