Parameters |
Mfr |
NXP USA Inc. |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Obsolete |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
1 A |
Voltage - Collector Emitter Breakdown (Max) |
80 V |
Vce Saturation (Max) @ Ib, Ic |
500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
63 @ 150mA, 2V |
Power - Max |
830 mW |
Frequency - Transition |
180MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package |
TO-92-3 |
Base Product Number |
BC63 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Standard Package |
2,000 |
Bipolar (BJT) Transistor NPN 80 V 1 A 180MHz 830 mW Through Hole TO-92-3