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NXP USA Inc. BS108/01,126
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| Parameters | |
|---|---|
| Mfr | NXP USA Inc. |
| Series | - |
| Package | Tape & Box (TB) |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 100mA, 2.8V |
| Vgs(th) (Max) @ Id | 1.8V @ 1mA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Base Product Number | BS10 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 2,000 |
N-Channel 200 V 300mA (Ta) 1W (Ta) Through Hole TO-92-3
