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NXP USA Inc. BS108/01,126

BS108/01,126


  • Manufacturer: ON SEMICONDUCTOR
  • Chip 1 Group NO: BS108/01,126
  • Price:
  • Datasheet: PDF
  • Description: BS108/01,126(Kg)
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Details

Tags

Parameters
Mfr NXP USA Inc.
Series -
Package Tape & Box (TB)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V
Rds On (Max) @ Id, Vgs 5Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id 1.8V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product Number BS10
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,000
N-Channel 200 V 300mA (Ta) 1W (Ta) Through Hole TO-92-3