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NXP USA Inc. BUK7Y35-55B,115

BUK7Y35-55B,115


  • Manufacturer: ON SEMICONDUCTOR
  • Chip 1 Group NO: BUK7Y35-55B,115
  • Price:
  • Datasheet: PDF
  • Description: BUK7Y35-55B,115(Kg)
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Details

Tags

Parameters
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
Base Product Number BUK7
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,500
Mfr NXP USA Inc.
Series TrenchMOS™
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 28.43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 13.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 781 pF @ 25 V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
N-Channel 55 V 28.43A (Tc) 60W (Tc) Surface Mount LFPAK56, Power-SO8