Parameters |
Mfr |
NXP USA Inc. |
Series |
- |
Package |
Tape & Box (TB) |
Product Status |
Obsolete |
Transistor Type |
NPN - Pre-Biased |
Current - Collector (Ic) (Max) |
100 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Resistor - Base (R1) |
10 kOhms |
Resistor - Emitter Base (R2) |
47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) |
1µA |
Power - Max |
500 mW |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package |
TO-92-3 |
Base Product Number |
PDTC114 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Standard Package |
2,000 |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 500 mW Through Hole TO-92-3