Call Us: 1(8457) SAMSON8 (USA)

  • Twitter
  • facebook
  • WhatsApp
  • YouTube
banner_page

NXP USA Inc. PDTC114YS,126

PDTC114YS,126


  • Manufacturer: ON SEMICONDUCTOR
  • Chip 1 Group NO: PDTC114YS,126
  • Price:
  • Datasheet: PDF
  • Description: PDTC114YS,126(Kg)
If you need to check our product or price list, please leave your email and we will contact you within 24 hours. Clicking on the website skype will result in a faster response!

Details

Tags

Parameters
Mfr NXP USA Inc.
Series -
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA
Power - Max 500 mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number PDTC114
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 2,000
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 500 mW Through Hole TO-92-3