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NXP USA Inc. PSMN8R5-108ESQ

PSMN8R5-108ESQ


  • Manufacturer: ON SEMICONDUCTOR
  • Chip 1 Group NO: PSMN8R5-108ESQ
  • Price:
  • Datasheet: -
  • Description: PSMN8R5-108ESQ(Kg)
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Details

Tags

Parameters
Mfr NXP USA Inc.
Series -
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 108 V
Current - Continuous Drain (Id) @ 25°C 100A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5512 pF @ 50 V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number PSMN8
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 108 V 100A (Tj) 263W (Tc) Through Hole I2PAK