Parameters |
Mfr |
onsemi |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
NPN |
Voltage - Collector Emitter Breakdown (Max) |
60 V |
Vce Saturation (Max) @ Ib, Ic |
1V @ 100mA, 1A |
Current - Collector Cutoff (Max) |
10nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
40 @ 150mA,1V |
Power - Max |
800 mW |
Frequency - Transition |
- |
Operating Temperature |
- |
Mounting Type |
Through Hole |
Package / Case |
TO-205AD, TO-39-3 Metal Can |
Supplier Device Package |
TO-39 |
Base Product Number |
2N310 |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Standard Package |
100 |
Bipolar (BJT) Transistor NPN 60 V 800 mW Through Hole TO-39