Parameters |
Mfr |
onsemi |
Series |
- |
Package |
Tape & Box (TB) |
Product Status |
Obsolete |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
500 mA |
Voltage - Collector Emitter Breakdown (Max) |
30 V |
Vce Saturation (Max) @ Ib, Ic |
1V @ 5mA, 100mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 50mA, 5V |
Power - Max |
625 mW |
Frequency - Transition |
100MHz |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package |
TO-92-3 |
Base Product Number |
2N3704 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Standard Package |
2,000 |
Bipolar (BJT) Transistor NPN 30 V 500 mA 100MHz 625 mW Through Hole TO-92-3