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onsemi 2N5885G
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| Parameters | |
|---|---|
| Mfr | onsemi |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 6.25A, 25A |
| Current - Collector Cutoff (Max) | 2mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A, 4V |
| Power - Max | 200 W |
| Frequency - Transition | 4MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| Supplier Device Package | TO-204 (TO-3) |
| Base Product Number | 2N5885 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 100 |
Bipolar (BJT) Transistor NPN 60 V 25 A 4MHz 200 W Through Hole TO-204 (TO-3)
