Call Us: 1(8457) SAMSON8 (USA)
onsemi BC517_J35Z
If you need to check our product or price list, please leave your email and we will contact you within 24 hours. Clicking on the website skype will result in a faster response!
| Parameters | |
|---|---|
| Mfr | onsemi |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 1.2 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30000 @ 20mA, 2V |
| Power - Max | 625 mW |
| Frequency - Transition | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| Base Product Number | BC517 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 2,000 |
Bipolar (BJT) Transistor NPN - Darlington 30 V 1.2 A 625 mW Through Hole TO-92-3
