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onsemi BC517G
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| Parameters | |
|---|---|
| Mfr | onsemi |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30000 @ 20mA, 2V |
| Power - Max | 625 mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package | TO-92 (TO-226) |
| Base Product Number | BC517 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0075 |
| Standard Package | 5,000 |
Bipolar (BJT) Transistor NPN - Darlington 30 V 1 A 200MHz 625 mW Through Hole TO-92 (TO-226)
