Parameters |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
5Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id |
3V @ 1mA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
40 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
830mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92-3 |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Base Product Number |
BS170 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
Not Applicable |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Standard Package |
2,000 |
Mfr |
onsemi |
Series |
- |
Package |
Tape & Reel (TR) |
N-Channel 60 V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3