Parameters |
Mfr |
onsemi |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
1A (Ta) |
Rds On (Max) @ Id, Vgs |
630mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id |
- |
Gate Charge (Qg) (Max) @ Vgs |
6.5 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds |
240 pF @ 20 V |
FET Feature |
- |
Power Dissipation (Max) |
1W (Ta) |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
3-CPH |
Package / Case |
SC-96 |
RoHS Status |
Not applicable |
ECCN |
EAR99 |
HTSUS |
0000.00.0000 |
Standard Package |
3,000 |
N-Channel 100 V 1A (Ta) 1W (Ta) Surface Mount 3-CPH