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onsemi FDI33N25TU

FDI33N25TU


  • Manufacturer: Omron Electronics Inc-EMC Div
  • Chip 1 Group NO: FDI33N25TU
  • Price:
  • Datasheet: PDF
  • Description: FDI33N25TU(Kg)
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Details

Tags

Parameters
Mfr onsemi
Series UniFET™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 94mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2135 pF @ 25 V
FET Feature -
Power Dissipation (Max) 235W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number FDI33
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 250 V 33A (Tc) 235W (Tc) Through Hole I2PAK (TO-262)