Parameters |
Product Status |
Active |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
650 V |
Current - Average Rectified (Io) |
25A |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
200 µA @ 650 V |
Capacitance @ Vr, F |
1085pF @ 1V, 100kHz |
Mounting Type |
Through Hole |
Package / Case |
TO-247-2 |
Supplier Device Package |
TO-247-2 |
Operating Temperature - Junction |
-55°C ~ 175°C |
Base Product Number |
FFSH2065 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
Not Applicable |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.10.0080 |
Standard Package |
30 |
Mfr |
onsemi |
Series |
- |
Package |
Tube |
Diode 650 V 25A Through Hole TO-247-2