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onsemi FGA50N100BNTD2
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| Parameters | |
|---|---|
| Mfr | onsemi |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| IGBT Type | NPT and Trench |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Power - Max | 156 W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 257 nC |
| Td (on/off) @ 25°C | 34ns/243ns |
| Test Condition | 600V, 60A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 75 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P |
| Base Product Number | FGA50N100 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 450 |
IGBT NPT and Trench 1000 V 50 A 156 W Through Hole TO-3P
