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onsemi FJN4310RTA
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| Parameters | |
|---|---|
| Mfr | onsemi |
| Series | - |
| Package | Tape & Box (TB) |
| Product Status | Obsolete |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Resistor - Base (R1) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 200 MHz |
| Power - Max | 300 mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| Base Product Number | FJN431 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0075 |
| Standard Package | 2,000 |
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40 V 100 mA 200 MHz 300 mW Through Hole TO-92-3
