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onsemi KSD363O
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| Parameters | |
|---|---|
| Mfr | onsemi |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 1A, 5V |
| Power - Max | 40 W |
| Frequency - Transition | 10MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
| Base Product Number | KSD363 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1,200 |
Bipolar (BJT) Transistor NPN 120 V 6 A 10MHz 40 W Through Hole TO-220-3
