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onsemi MCH5837-TL-E
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| Parameters | |
|---|---|
| Mfr | onsemi |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 1A, 4V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 115 pF @ 10 V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 800mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-MCPH |
| Package / Case | 6-SMD (5 Leads), Flat Lead |
| RoHS Status | Not applicable |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 3,000 |
N-Channel 20 V 2A (Ta) 800mW (Ta) Surface Mount 5-MCPH
