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onsemi MCH6626-TL-E
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| Parameters | |
|---|---|
| Mfr | onsemi |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A, 1A |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 800mA, 4V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds | 105pF @ 10V |
| Power - Max | 800mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | 6-MCPH |
| Base Product Number | MCH6626 |
| RoHS Status | Not applicable |
| ECCN | EAR99 |
| HTSUS | 0000.00.0000 |
| Standard Package | 3,000 |
Mosfet Array 20V 1.6A, 1A 800mW Surface Mount 6-MCPH
