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onsemi MJD112G
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| Parameters | |
|---|---|
| Mfr | onsemi |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Power - Max | 1.75 W |
| Frequency - Transition | 25MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Base Product Number | MJD112 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 75 |
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Surface Mount DPAK
