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onsemi MJD253-001
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| Parameters | |
|---|---|
| Mfr | onsemi |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
| Power - Max | 1.4 W |
| Frequency - Transition | 40MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | I-PAK |
| Base Product Number | MJD25 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0075 |
| Standard Package | 75 |
Bipolar (BJT) Transistor PNP 100 V 4 A 40MHz 1.4 W Through Hole I-PAK
