Parameters |
Mfr |
onsemi |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
1 A |
Voltage - Collector Emitter Breakdown (Max) |
40 V |
Vce Saturation (Max) @ Ib, Ic |
600mV @ 100mA, 1A |
Current - Collector Cutoff (Max) |
100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
50 @ 500mA, 1V |
Power - Max |
625 mW |
Frequency - Transition |
100MHz |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 Long Body |
Supplier Device Package |
TO-92 (TO-226) |
Base Product Number |
MPS660 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Other Names |
MPS6602GOS |
Standard Package |
5,000 |
Bipolar (BJT) Transistor NPN 40 V 1 A 100MHz 625 mW Through Hole TO-92 (TO-226)