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onsemi NTHS2101PT1
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| Parameters | |
|---|---|
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8 V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 6.4 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | ChipFET™ |
| Package / Case | 8-SMD, Flat Lead |
| Base Product Number | NTHS21 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 3,000 |
P-Channel 8 V 5.4A (Tj) 1.3W (Ta) Surface Mount ChipFET™
