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onsemi NTMSD2P102LR2G
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| Parameters | |
|---|---|
| Mfr | onsemi |
| Series | FETKY™ |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 16 V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 710mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | NTMSD2 |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 2,500 |
P-Channel 20 V 2.3A (Ta) 710mW (Ta) Surface Mount 8-SOIC
