Parameters |
Mfr |
onsemi |
Series |
- |
Package |
Tape & Box (TB) |
Product Status |
Obsolete |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
600 mA |
Voltage - Collector Emitter Breakdown (Max) |
30 V |
Vce Saturation (Max) @ Ib, Ic |
1V @ 10mA, 100mA |
Current - Collector Cutoff (Max) |
50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
150 @ 10mA, 10V |
Power - Max |
625 mW |
Frequency - Transition |
- |
Operating Temperature |
- |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package |
TO-92-3 |
Base Product Number |
PN356 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Standard Package |
2,000 |
Bipolar (BJT) Transistor NPN 30 V 600 mA 625 mW Through Hole TO-92-3