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Renesas Electronics America Inc HIP2101EIBZ
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Digi-Key Programmable | Not Verified |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 9V ~ 14V |
| Logic Voltage - VIL, VIH | 0.8V, 2.2V |
| Current - Peak Output (Source, Sink) | 2A, 2A |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 114 V |
| Rise / Fall Time (Typ) | 10ns, 10ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
| Supplier Device Package | 8-SOIC-EP |
| Base Product Number | HIP2101 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.39.0001 |
| Other Names | -1291-HIP2101EIBZ |
| Standard Package | 98 |
Half-Bridge Gate Driver IC Non-Inverting 8-SOIC-EP
