Parameters |
Mfr |
Renesas Electronics America Inc |
Series |
- |
Package |
Tube |
Product Status |
Active |
Driven Configuration |
Half-Bridge |
Channel Type |
Synchronous |
Number of Drivers |
2 |
Gate Type |
N-Channel MOSFET |
Voltage - Supply |
6V ~ 18V |
Logic Voltage - VIL, VIH |
1.47V, 1.84V |
Current - Peak Output (Source, Sink) |
3A, 4A |
Input Type |
Non-Inverting |
High Side Voltage - Max (Bootstrap) |
115 V |
Rise / Fall Time (Typ) |
20ns, 20ns |
Operating Temperature |
-40°C ~ 125°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
10-WDFN Exposed Pad |
Supplier Device Package |
10-TDFN (4x4) |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Other Names |
20-HIP2210FRTZ |
Standard Package |
1 |
Half-Bridge Gate Driver IC Non-Inverting 10-TDFN (4x4)