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Renesas Electronics America Inc IDT70P3337S233RMI
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Synchronous QDR II |
| Memory Size | 9Mbit |
| Memory Organization | 512K x 18 |
| Memory Interface | Parallel |
| Clock Frequency | 233 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 7.2 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 576-BBGA, FCBGA |
| Supplier Device Package | 576-FCBGA (25x25) |
| Base Product Number | IDT70P3337 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 4 (72 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Other Names | 70P3337S233RMI |
| Standard Package | 3 |
SRAM - Dual Port, Synchronous QDR II Memory IC 9Mbit Parallel 233 MHz 7.2 ns 576-FCBGA (25x25)
