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Renesas Electronics America Inc IDT71V124SA20YG
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 1Mbit |
| Memory Organization | 128K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 20ns |
| Access Time | 20 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 32-BSOJ (0.400", 10.16mm Width) |
| Supplier Device Package | 32-SOJ |
| Base Product Number | IDT71V124 |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2B |
| HTSUS | 8542.32.0041 |
| Other Names | 71V124SA20YG |
| Standard Package | 23 |
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ
