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Renesas Electronics America Inc NP32N055SHE-E1-AY
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 66W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| RoHS Status | ROHS3 Compliant |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 2,500 |
N-Channel 55 V 32A (Tc) 1.2W (Ta), 66W (Tc) Surface Mount TO-252 (MP-3ZK)
