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Renesas Electronics America Inc R1LV1616HBG-4SI#B0
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | R1LV1616HBG-I |
| Package | Bulk |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 16Mbit |
| Memory Organization | 1M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 45ns |
| Access Time | 45 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-TFBGA (8x9.5) |
| Base Product Number | R1LV1616H |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Other Names | 559-R1LV1616HBG-4SI#B0 |
| Standard Package | 264 |
SRAM - Asynchronous Memory IC 16Mbit Parallel 45 ns 48-TFBGA (8x9.5)
