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Renesas Electronics America Inc R1LV1616RSD-5SI#B0
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 16Mbit |
| Memory Organization | 1M x 16, 2M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 55ns |
| Access Time | 55 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 52-TFSOP (0.350", 8.89mm Width) |
| Supplier Device Package | 52-TSOP II |
| Base Product Number | R1LV1616R |
| RoHS Status | Not applicable |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| Standard Package | 1 |
SRAM - Asynchronous Memory IC 16Mbit Parallel 55 ns 52-TSOP II
