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Renesas Electronics America Inc RJH65D27BDPQ-A0#T2
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tube |
| Product Status | Active |
| IGBT Type | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 100 A |
| Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 50A |
| Power - Max | 375 W |
| Switching Energy | 1mJ (on), 1.5mJ (off) |
| Input Type | Standard |
| Gate Charge | 175 nC |
| Td (on/off) @ 25°C | 20ns/165ns |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 80 ns |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247A |
| Base Product Number | RJH65D27 |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1 |
IGBT Trench 650 V 100 A 375 W Through Hole TO-247A
