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Renesas Electronics America Inc UPA2680T1E-E2-AT
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| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 3.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 10 V |
| FET Feature | Schottky Diode (Isolated) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-MLP (3x3) |
| Package / Case | 6-VDFN Exposed Pad |
| RoHS Status | ROHS3 Compliant |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 3,000 |
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
N-Channel 20 V 3A (Ta) Surface Mount 6-MLP (3x3)
