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Renesas Electronics America Inc UPA2810T1L-E1-AY
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Package / Case | 8-VDFN Exposed Pad |
| RoHS Status | Not applicable |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 3,000 |
P-Channel 30 V 13A (Ta) 1.5W (Ta) Surface Mount 8-DFN3333 (3.3x3.3)
