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Renesas Electronics America Inc UPA2812T1L-E2-AT

UPA2812T1L-E2-AT


  • Manufacturer: Alpha & Omega Semiconductor Inc.
  • Chip 1 Group NO: UPA2812T1L-E2-AT
  • Price:
  • Datasheet: PDF
  • Description: UPA2812T1L-E2-AT(Kg)
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Parameters
Mfr Renesas Electronics America Inc
Series -
Package Tape & Reel (TR)
Product Status Last Time Buy
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3740 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HWSON (3.3x3.3)
Package / Case 8-PowerVDFN
Base Product Number UPA2812
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
P-Channel 30 V 30A (Tc) 1.5W (Ta) Surface Mount 8-HWSON (3.3x3.3)