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Renesas Electronics America Inc UPA652TT-E1-A
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 294mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.1 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 126 pF @ 10 V |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WSOF |
| Package / Case | 6-SMD, Flat Leads |
| RoHS Status | ROHS3 Compliant |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 3,000 |
P-Channel 20 V 2A (Ta) Surface Mount 6-WSOF
