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Rohm Semiconductor EMD5T2R
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| Parameters | |
|---|---|
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Transistor Type | 1 PNP Pre-Biased, 1 NPN |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 47kOhms, 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms, 10kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V / 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |
| Base Product Number | EMD5T2 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 8,000 |
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased, 1 NPN 50V 100mA 250MHz 150mW Surface Mount EMT6
