Parameters | |
---|---|
Mfr | Rohm Semiconductor |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 390mOhm @ 6A, 15V |
Vgs(th) (Max) @ Id | 7V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 15 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 60W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FM |
Package / Case | TO-220-3 Full Pack |
Base Product Number | R6012 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | 846-R6012JNXC7G |
Standard Package | 50 |