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STMicroelectronics SCTH90N65G2V-7
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| Parameters | |
|---|---|
| Mfr | STMicroelectronics |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-7 |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Base Product Number | SCTH90 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1,000 |
N-Channel 650 V 90A (Tc) 330W (Tc) Surface Mount H2PAK-7
