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STMicroelectronics SCTWA20N120
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| Parameters | |
|---|---|
| Mfr | STMicroelectronics |
| Series | - |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 239mOhm @ 10A, 20V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | HiP247™ Long Leads |
| Package / Case | TO-247-3 |
| Base Product Number | SCTWA20 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | -1138-SCTWA20N120 |
| Standard Package | 30 |
N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™ Long Leads
