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STMicroelectronics STB32NM50N

STB32NM50N


  • Manufacturer: Brady Corporation
  • Chip 1 Group NO: STB32NM50N
  • Price: $4.25
  • Datasheet: PDF
  • Description: STB32NM50N(Kg)
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Details

Tags

Parameters
Mfr STMicroelectronics
Series MDmesh™ II
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1973 pF @ 50 V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB32
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
N-Channel 500 V 22A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)