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STMicroelectronics STD3NK80Z-1

STD3NK80Z-1


  • Manufacturer: Brady Corporation
  • Chip 1 Group NO: STD3NK80Z-1
  • Price: $1.97
  • Datasheet: PDF
  • Description: STD3NK80Z-1(Kg)
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Details

Tags

Parameters
Mfr STMicroelectronics
Series SuperMESH™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 485 pF @ 25 V
FET Feature -
Power Dissipation (Max) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number STD3NK80
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 75
N-Channel 800 V 2.5A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)