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STMicroelectronics STF10N60DM2

STF10N60DM2


  • Manufacturer: Brady Corporation
  • Chip 1 Group NO: STF10N60DM2
  • Price: $1.81
  • Datasheet: PDF
  • Description: STF10N60DM2(Kg)
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Details

Tags

Parameters
Mfr STMicroelectronics
Series MDmesh™ DM2
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 529 pF @ 100 V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack
Base Product Number STF10
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16959
Standard Package 50
N-Channel 600 V 8A (Tc) 25W (Tc) Through Hole TO-220FP