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STMicroelectronics STH80N10F7-2

STH80N10F7-2


  • Manufacturer: Brady Corporation
  • Chip 1 Group NO: STH80N10F7-2
  • Price:
  • Datasheet: PDF
  • Description: STH80N10F7-2(Kg)
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Details

Tags

Parameters
Mfr STMicroelectronics
Series DeepGATE™, STripFET™ VII
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 50 V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STH80N
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
N-Channel 100 V 80A (Tc) 110W (Tc) Surface Mount H2Pak-2